Журнал академических исследований Нового Узбекистана 2-jild 5-son (2025) · 132–135-betlar

MODELING THE EFFECT OF TEMPERATURE ON SILICON-BASED SEMICONDUCTOR DEVICES

Urinbaev, Sh.M, Nurmetova, G.E

DOI: 10.5281/zenodo.15533394 · Manbada o'qish →

Annotatsiya

The behavior of silicon-based semiconductor devices is significantly influenced by temperature. Temperature variations affect key parameters such as carrier mobility, bandgap energy, and recombination rates, thereby altering the current-voltage (I-V) characteristics. This study aims to model these effects and provide insights into the performance of silicon-based devices under varying thermal conditions. By incorporating temperature-dependent equations and numerical simulations, the study highlights the critical parameters that engineers must consider in device design and optimization.

Metadata manbasi: jurnal OAI-PMH arxivi · Sindex to'liq matnni saqlamaydi, manbaga havola beradi.