Eurasian Journal of Academic Research 2-jild 13-son (2022) · 1013–1015-betlar

PRODUCTION OF PHOTOSENSITIVE DEVICES BY MONITORING AND CONTROLLING THE PARAMETRES OF SEMICONDUCTOR STRUCTURES

Chorshanbiyev, Xolto’ra

DOI: 10.5281/zenodo.7476606 · Manbada o'qish → · PDF (manba serverida)

Annotatsiya

The multispectral photosensitive device includes at least one opaque base layer; wherein each main layer has at least two sides, and at least two sides are provided with groups of photosensitive pixels, each group of photosensitive pixels is used to receive light of any spectrum coming from the front direction of the side. Alternatively, the multispectral photosensitive device includes at least one transparent base layer. In this case, each main layer has at least two sides, where at least two sides are provided with photosensitive pixel groups, each photosensitive pixel group is used to receive light of the spectrum of interest coming from the front or rear direction, the side where the photosensitive pixel group is located.

Semiconductor, physical parameters, photoelectric parameters, photosensitive devices.

Metadata manbasi: jurnal OAI-PMH arxivi · Sindex to'liq matnni saqlamaydi, manbaga havola beradi.