O‘zbekiston fizika jurnali Volume 27 Issue 3 (2025)

Structural features and electrical properties of the n-GaAs–p-(ZnSe)1–x–y(Ge2)x(GaAs1–δBiδ)y heterostructure with various nanoscale inclusions

Зайнабидинов, С.З., Бобоев, А.Й., Солиев, И.М., Юнусалиев, Н.Ю.

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Abstract

This paper presents experimental results of studying the structural and electrophysical propertiesof n-GaAs−p-(ZnSe)1-x-y(Ge2)x(GaAs1-δBiδ)y heterostructure with different nanoinclusionsobtained by liquid-phase epitaxy. On the basis of X-ray microprobe and structural analysis, thedistribution profile of ZnSe, Ge2 and GaAs1-δBiδ components in the epitaxial layer with a gradualchange of composition along the depth has been determined. The formation of Ge2 nanocrystalsand GaAs1-δBiδ quantum wells, which determine unique photovoltaic properties of theinvestigated heterostructure, has been established. Charge transfer mechanisms depending onthe direction of current flow have been determined, and the criterion of predominance of thedrift mechanism of charge transfer over the diffusion one has been revealed.

примесьтвёрдый растворатомное соединениегетероструктурынанокристаллквантовая ямаimpuritysolid solutionatomic compoundheterostructures

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Cite

APA 7 
Зайнабидинов, С.З., Бобоев, А.Й., Солиев, И.М. & Юнусалиев, Н.Ю. (2025). Structural features and electrical properties of the n-GaAs–p-(ZnSe)1–x–y(Ge2)x(GaAs1–δBiδ)y heterostructure with various nanoscale inclusions. O‘zbekiston fizika jurnali, 27(3).
GOST R 7.0.5 
Зайнабидинов, С.З., Бобоев, А.Й., Солиев, И.М., Юнусалиев, Н.Ю. Structural features and electrical properties of the n-GaAs–p-(ZnSe)1–x–y(Ge2)x(GaAs1–δBiδ)y heterostructure with various nanoscale inclusions // O‘zbekiston fizika jurnali. 2025. Т. 27. № 3.
BibTeX 
@article{с.з.2025,
  author  = {Зайнабидинов, С.З. and Бобоев, А.Й. and Солиев, И.М. and Юнусалиев, Н.Ю.},
  title   = {Structural features and electrical properties of the n-GaAs–p-(ZnSe)1–x–y(Ge2)x(GaAs1–δBiδ)y heterostructure with various nanoscale inclusions},
  journal = {O‘zbekiston fizika jurnali},
  year    = {2025},
  volume  = {27},
  number  = {3}
}
RIS 
TY  - JOUR
AU  - Зайнабидинов, С.З.
AU  - Бобоев, А.Й.
AU  - Солиев, И.М.
AU  - Юнусалиев, Н.Ю.
TI  - Structural features and electrical properties of the n-GaAs–p-(ZnSe)1–x–y(Ge2)x(GaAs1–δBiδ)y heterostructure with various nanoscale inclusions
JO  - O‘zbekiston fizika jurnali
PY  - 2025
VL  - 27
IS  - 3
ER  -