Ilim ha’m ja’miyet Issue 4 (2017) · pp. 10-11

THE INFLUENCE OF MICROWAVE RADIATION TO THE ELECTROPHYSICAL CHARACTERISTICS OF AU-TIB X –GAAS DIODE STRUCTURE

Kaypnazarov, S.G.

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Abstract

It is defined that during the effecting time of microwave radiation to the Au-TiBx-GaAs diode structure for 0-20sc the structure parameters have improved. In the result of microwave the branchis temperature stability of this diode structure is shown. In the result of these factors the change of external curvature radius has been determined.

диодли структураэлектрофизик ҳарактеристикамикро тўлқин нурланишидеградация механизмиички механик кучланиш (ИМК)ЖЙЧ нурлантиришШоттки диодлариэгрилик радиусипланар технологиякенгайтириш параметри

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Cite

APA 7 
Kaypnazarov, S.G. (2017). THE INFLUENCE OF MICROWAVE RADIATION TO THE ELECTROPHYSICAL CHARACTERISTICS OF AU-TIB X –GAAS DIODE STRUCTURE. Ilim ha’m ja’miyet, (4), 10-11.
GOST R 7.0.5 
Kaypnazarov, S.G. THE INFLUENCE OF MICROWAVE RADIATION TO THE ELECTROPHYSICAL CHARACTERISTICS OF AU-TIB X –GAAS DIODE STRUCTURE // Ilim ha’m ja’miyet. 2017. № 4. С. 10-11.
BibTeX 
@article{s.g.2017,
  author  = {Kaypnazarov, S.G.},
  title   = {THE INFLUENCE OF MICROWAVE RADIATION TO THE ELECTROPHYSICAL CHARACTERISTICS OF AU-TIB X –GAAS DIODE STRUCTURE},
  journal = {Ilim ha’m ja’miyet},
  year    = {2017},
  number  = {4},
  pages   = {10-11}
}
RIS 
TY  - JOUR
AU  - Kaypnazarov, S.G.
TI  - THE INFLUENCE OF MICROWAVE RADIATION TO THE ELECTROPHYSICAL CHARACTERISTICS OF AU-TIB X –GAAS DIODE STRUCTURE
JO  - Ilim ha’m ja’miyet
PY  - 2017
IS  - 4
SP  - 10
EP  - 11
ER  -