Ilim ha’m ja’miyet Issue 1-1 (2022) · pp. 23-24

KREMNIYGA FOSFOR VA BOR ATOMLARINING KETMA-KET DIFFUZIYASI

Mavlonov, G‘.X., Isamov, S.B., Kenjayev, Z.T.

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Abstract

In this work investigated and studied 3 groups of of diffusion samples in silicon, separately phosphorus and boron, sequential diffusion of phosphorus and boron. The aim of this study is to study the interaction and distribution of phosphorus and boron diffusion of silicon. As a result, it was found that when boron diffuses into silicon with a high phosphorus concentration, the atoms of electroactive boron compensate 2,5-3 times more phosphorus atoms and change the type of material conductivity.

kremniyfosforbordiffuziyalegirlashelektronkovakкремнийфосфорбор

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Cite

APA 7 
Mavlonov, G‘.X., Isamov, S.B. & Kenjayev, Z.T. (2022). KREMNIYGA FOSFOR VA BOR ATOMLARINING KETMA-KET DIFFUZIYASI. Ilim ha’m ja’miyet, (1-1), 23-24.
GOST R 7.0.5 
Mavlonov, G‘.X., Isamov, S.B., Kenjayev, Z.T. KREMNIYGA FOSFOR VA BOR ATOMLARINING KETMA-KET DIFFUZIYASI // Ilim ha’m ja’miyet. 2022. № 1-1. С. 23-24.
BibTeX 
@article{g‘.x.2022,
  author  = {Mavlonov, G‘.X. and Isamov, S.B. and Kenjayev, Z.T.},
  title   = {KREMNIYGA FOSFOR VA BOR ATOMLARINING KETMA-KET DIFFUZIYASI},
  journal = {Ilim ha’m ja’miyet},
  year    = {2022},
  number  = {1-1},
  pages   = {23-24}
}
RIS 
TY  - JOUR
AU  - Mavlonov, G‘.X.
AU  - Isamov, S.B.
AU  - Kenjayev, Z.T.
TI  - KREMNIYGA FOSFOR VA BOR ATOMLARINING KETMA-KET DIFFUZIYASI
JO  - Ilim ha’m ja’miyet
PY  - 2022
IS  - 1-1
SP  - 23
EP  - 24
ER  -