Ilim ha’m ja’miyet № 4-1 (2023) · Саҳифаҳои 31-34
ИССЛЕДОВАНИЕ ИНТЕГРАЛЬНОЙ ТОКОВОЙ ЧУВСТВИТЕЛЬНОСТИ СТРУКТУРЫ Al–Al2O3–p-CdTe–Mo
Утениязов, А.К., Есенбаева, Э.С., Аннаева, Ш.Х., Нсанбаев, М.Т.
Аннотатсия
The article presents the results of studies of the integral current sensitivity of the Al-Al2O3–p-CdTe-Mo structure when applying high voltages of shift in the forward direction of the current. It is shown that the studied structure of Al-Al2O3-p-CdTe-Mo in the forward direction of the current works as an injectional photodetector with internal amplification, which speed is equal to τ≈10-7-10-6s. It is established that the integral current sensitivity reaches the highest value of Sint Sint~1.4∙106 A/W when illuminated with white light with illumination E≈7.85∙10-7 lx and at V=7 V.
интеграл токнинг сезгирлигифотосезгирликинжекцияинжекцион фото қабул қилгичфототокёритилганликсилжиш кучланишиинтегральная токовая чувствительностьфоточувствительностьинжекция
Манбаи метамаълумот: бойгонии OAI-PMH-и маҷалла · Sindex матни пурраро нигоҳ намедорад, ба манбаъ пайванд медиҳад.