Ilim ha’m ja’miyet 3-1-сан (2024) · 15-17-беттер

KREMNIY ASOSIDAGI FOTOELEMENTLARDA TEKSTURALAR OLISH TEXNOLOGIYASI

Ismaylov, Q.A., Ismaylov, B.Q., Kamalov, X.U., Zikrillaev, X.F., Sattorov, A.A., Norqulov, N.

Булактан окуу

Аннотация

A texture was created on the surface of a silicon single crystal wafer. It has been discovered that the efficiency of photovoltaic cells can be improved by controlling the texture formation process. A technology was created to obtain an accurate height texture by controlling time. It was found that the short circuit current and open circuit voltage of the photocell increase when the height of the created textures is in the range of 3-15 microns.

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Метадайындар булагы: журналдын OAI-PMH архиви · Sindex толук текстти сактабайт, булакка шилтеме берет.

Цитата алуу

APA 7 
Ismaylov, Q.A., Ismaylov, B.Q., Kamalov, X.U., Zikrillaev, X.F., Sattorov, A.A. & Norqulov, N. (2024). KREMNIY ASOSIDAGI FOTOELEMENTLARDA TEKSTURALAR OLISH TEXNOLOGIYASI. Ilim ha’m ja’miyet, (3-1), 15-17.
GOST R 7.0.5 
Ismaylov, Q.A., Ismaylov, B.Q., Kamalov, X.U., Zikrillaev, X.F., Sattorov, A.A., Norqulov, N. KREMNIY ASOSIDAGI FOTOELEMENTLARDA TEKSTURALAR OLISH TEXNOLOGIYASI // Ilim ha’m ja’miyet. 2024. № 3-1. С. 15-17.
BibTeX 
@article{q.a.2024,
  author  = {Ismaylov, Q.A. and Ismaylov, B.Q. and Kamalov, X.U. and Zikrillaev, X.F. and Sattorov, A.A. and Norqulov, N.},
  title   = {KREMNIY ASOSIDAGI FOTOELEMENTLARDA TEKSTURALAR OLISH TEXNOLOGIYASI},
  journal = {Ilim ha’m ja’miyet},
  year    = {2024},
  number  = {3-1},
  pages   = {15-17}
}
RIS 
TY  - JOUR
AU  - Ismaylov, Q.A.
AU  - Ismaylov, B.Q.
AU  - Kamalov, X.U.
AU  - Zikrillaev, X.F.
AU  - Sattorov, A.A.
AU  - Norqulov, N.
TI  - KREMNIY ASOSIDAGI FOTOELEMENTLARDA TEKSTURALAR OLISH TEXNOLOGIYASI
JO  - Ilim ha’m ja’miyet
PY  - 2024
IS  - 3-1
SP  - 15
EP  - 17
ER  -