Ilim ha’m ja’miyet Issue 5-1 (2024) · pp. 9-11
ФЕРРОМАГНИТНЫЕ СВОЙСТВА КРЕМНИЯ ЛЕГИРОВАННОГО ПРИМЕСНЫМИ АТОМАМИ МАРГАНЦА ПРИ НИЗКИХ ТЕМПЕРАТУРАХ
Исмайлов, К.А., Исмаилов, Т.Б., Оламберганов, Ш.З., Камалов, Х.У., Нурымбетова, Г.C., Сапаров, А.К., Зикриллаев, Х.Ф.
Abstract
Studies of the magnetic properties of silicon samples doped with impurity manganese atoms in the low temperature region T=30 K revealed a ferromagnetic state with the following parameters Ms=3.41·10-3 emu/cm-3 (saturation magnetization), Mr=4.24·10-4 emu/cm-3 (residual magnetization) and Hc=158 Oe (coercive force), the possibility of using silicon samples diffusion-doped with impurity manganese atoms to create magnetic sensors and spintronic devices is shown. It has been shown that silicon samples doped with manganese impurity atoms can be considered as a new magnetic semiconductor material.
марганецкиришмадиффузиянанокластергистерезисmanganeseimpuritydiffusionnanoclusterhysteresis loop
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