Ilim ha’m ja’miyet 2-1-нөмір (2025) · 20-23-беттер
2D O‘LCHAMLI P-N-O‘TISHNING O‘TA YUQORI CHASTOTALI MAYDON TA’SIRIDA O‘ZGARISHI
Kosimova, M.O., Maxmudov, A.S.
Аңдатпа
It was studied how the single-layer quantum density of MoS2 changes according to the Fermi level under the action of a microwave field. It was shown that in 2D materials, a higher quantum density value serves to increase the operating speed and sensitivity of transistors, and the oxide density increases the durability of the material under an electric field.
2D oʻlchamli p-n–o’tishkvant sig‘imiO‘YUCH maydonoksid sig‘imibir qatlamli MoS22D-размерный p–n-переходквантовая плотностьполе сверхвысокой частоты полеоксидная плотностьоднослойная поверхность ферми квантовой плотнсоти MoS2
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