Ilim ha’m ja’miyet № 3-1 (2026) · Саҳифаҳои 21-23
RECONFIGURATION OF INTERFACE CHARGE STATES AND ITS EFFECT ON THE ELECTRO-PHYSICAL PROPERTIES OF METAL–DIELECTRIC–SEMICONDUCTOR STRUCTURES
Mamatkarimov, Odiljon Okhundedaevich, Abdulkhayev, Abrorbek Abdulloxonovich, Fazliddinov, Salokhiddin Bakhriddinovich, Quchqarov, Behzod Hoshimjonovich, Маматкаримов, Одилжон Охундедаевич, Абдулхаев, Аброрбек Абдуллохонович, Фазлиддинов, Салохиддин Бахриддинович, Кучкаров, Бехзод Хошимжонович, Mamatkarimov, Odiljon Oxundedayevich, Abdulxayev, Abrorbek Abdulloxon oʻgʻli, Fazliddinov, Salohiddin Bahriddin oʻgʻli, Quchqarov, Behzod Hoshimjonovich
Аннотатсия
This work analyzes the physical mechanisms responsible for non-ideal electrical effects in metal–dielectric–semiconductor (MDS) structures. The study is based on the kinetic properties of charge states located at the interface and in the near-interface dielectric layer. It is shown that external influences modify the local potential landscape near the interface and redistribute charge-exchange kinetics without generating new defects. As a result, the electrical response of MDS structures is governed by the intrinsic kinetic dynamics of interface states.
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