Ilim ha’m ja’miyet 6-1-son (2024) · 4-6-betlar

DEVELOPMENT OF NANOMATERIALS TO INCREASE THE PERFORMANCE OF SILICON ELECTRONICS

Asanov, D.J., Ashirbekova, S.U.

Manbada oʻqish

Annotatsiya

The development of highly efficient and fast semiconductor components, as well as ultra-large integrated circuits (VLSI), requires the use of new materials in production processes. One of the most promising materials for modern microelectronics are metal silicides. These connections are widely used in solid-state electronics, in particular, to create rectifier and ohmic contacts, as well as conductive elements in integrated circuits. In addition, magnesium silicide single crystals exhibit excellent thermal efficiency characteristics, which makes magnesium and silicon attractive materials for creating thin-film semiconductor compounds such as MgSi, which have high thermal efficiency.

silisidlarelemenlar tarkibiVLSI (o‘ta keng ko‘lamli integral mikrosxemalar)faza tarkibielektron diffraktsiya sxemasiсилицидыэлементный составСБИС (сверхбольшие интегральные схемы)фазовый составэлектронограмма

Metadata manbasi: jurnal OAI-PMH arxivi · Sindex toʻliq matnni saqlamaydi, manbaga havola beradi.

Iqtibos olish

APA 7
Asanov, D.J. & Ashirbekova, S.U. (2024). DEVELOPMENT OF NANOMATERIALS TO INCREASE THE PERFORMANCE OF SILICON ELECTRONICS. Ilim ha’m ja’miyet, (6-1), 4-6.
GOST R 7.0.5
Asanov, D.J., Ashirbekova, S.U. DEVELOPMENT OF NANOMATERIALS TO INCREASE THE PERFORMANCE OF SILICON ELECTRONICS // Ilim ha’m ja’miyet. 2024. № 6-1. С. 4-6.
BibTeX
@article{d.j.2024,
  author  = {Asanov, D.J. and Ashirbekova, S.U.},
  title   = {DEVELOPMENT OF NANOMATERIALS TO INCREASE THE PERFORMANCE OF SILICON ELECTRONICS},
  journal = {Ilim ha’m ja’miyet},
  year    = {2024},
  number  = {6-1},
  pages   = {4-6}
}
RIS
TY  - JOUR
AU  - Asanov, D.J.
AU  - Ashirbekova, S.U.
TI  - DEVELOPMENT OF NANOMATERIALS TO INCREASE THE PERFORMANCE OF SILICON ELECTRONICS
JO  - Ilim ha’m ja’miyet
PY  - 2024
IS  - 6-1
SP  - 4
EP  - 6
ER  -