Қўқон университети хабарномаси (2023) · pp. 56-59

CURRENT TRANSFER IN p-Si–n-(Si2)1-x(GaN)x HETEROSTRUCTURE

Zhuraev Asom Kuylibayevich

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Abstract

This paper presents the results of a study on the growth of substitutional solid solutions (Si2)1-x(GaN)x on single-crystal Si (111) substrates by liquid-phase epitaxy from a limited volume of a tin solution-melt in a hydrogen medium and the current-voltage characteristic (CVC) of p-Si-n-(Si2)1-x(GaN)x structures.

solid solutions, Si2, GaNx, single crystal, liquid phase epitaxy from tin solution, hydrogen environment, voltage characteristics.

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Cite

APA 7 
Zhuraev Asom Kuylibayevich (2023). CURRENT TRANSFER IN p-Si–n-(Si2)1-x(GaN)x HETEROSTRUCTURE. Қўқон университети хабарномаси, 56-59.
GOST R 7.0.5 
Zhuraev Asom Kuylibayevich CURRENT TRANSFER IN p-Si–n-(Si2)1-x(GaN)x HETEROSTRUCTURE // Қўқон университети хабарномаси. 2023. С. 56-59.
BibTeX 
@article{kuylibayevich2023,
  author  = {Zhuraev Asom Kuylibayevich},
  title   = {CURRENT TRANSFER IN p-Si–n-(Si2)1-x(GaN)x HETEROSTRUCTURE},
  journal = {Қўқон университети хабарномаси},
  year    = {2023},
  pages   = {56-59}
}
RIS 
TY  - JOUR
AU  - Zhuraev Asom Kuylibayevich
TI  - CURRENT TRANSFER IN p-Si–n-(Si2)1-x(GaN)x HETEROSTRUCTURE
JO  - Қўқон университети хабарномаси
PY  - 2023
SP  - 56
EP  - 59
ER  -