O‘zbekiston fizika jurnali Ҷилди 27 № 3 (2025)
Formation of thermally stable ohmic contacts based on MoGeInW
Черкесова, Н.В., Ашуров, Х.Б., Мустафаев, А.Г., Мустафаев, Г.А.
Аннотатсия
Thermally stable low-resistance ohmic contacts are required for the creation of high-speedGaAs integrated circuits. In this work, annealing of MoGeW contact structures in an InAs atmosphereare studied. High thermal stability of the studied structures and their technologicalsuitability for subsequent stages of the integrated circuit manufacturing process are demonstrated.During the experiment, contact resistance measurements and X-ray structural analysisof MoGeW contacts are carried out to determine the parameters that make it possible to obtainlow-resistance ohmic contacts. It was determined that the contact resistance depends on the ratioof the Mo/Ge layer thicknesses and the annealing temperature.
омический контакттермостабильностьтермическая обработкаконтактное сопротивлениеионная имплантациявжиганиеohmic contactthermal stabilityheat treatmentcontact resistance
Манбаи метамаълумот: бойгонии OAI-PMH-и маҷалла · Sindex матни пурраро нигоҳ намедорад, ба манбаъ пайванд медиҳад.