O‘zbekiston fizika jurnali 27-jild 3-son (2025)

Formation of thermally stable ohmic contacts based on MoGeInW

Черкесова, Н.В., Ашуров, Х.Б., Мустафаев, А.Г., Мустафаев, Г.А.

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Annotatsiya

Thermally stable low-resistance ohmic contacts are required for the creation of high-speedGaAs integrated circuits. In this work, annealing of MoGeW contact structures in an InAs atmosphereare studied. High thermal stability of the studied structures and their technologicalsuitability for subsequent stages of the integrated circuit manufacturing process are demonstrated.During the experiment, contact resistance measurements and X-ray structural analysisof MoGeW contacts are carried out to determine the parameters that make it possible to obtainlow-resistance ohmic contacts. It was determined that the contact resistance depends on the ratioof the Mo/Ge layer thicknesses and the annealing temperature.

омический контакттермостабильностьтермическая обработкаконтактное сопротивлениеионная имплантациявжиганиеohmic contactthermal stabilityheat treatmentcontact resistance

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Iqtibos olish

APA 7 
Черкесова, Н.В., Ашуров, Х.Б., Мустафаев, А.Г. & Мустафаев, Г.А. (2025). Formation of thermally stable ohmic contacts based on MoGeInW. O‘zbekiston fizika jurnali, 27(3).
GOST R 7.0.5 
Черкесова, Н.В., Ашуров, Х.Б., Мустафаев, А.Г., Мустафаев, Г.А. Formation of thermally stable ohmic contacts based on MoGeInW // O‘zbekiston fizika jurnali. 2025. Т. 27. № 3.
BibTeX 
@article{н.в.2025,
  author  = {Черкесова, Н.В. and Ашуров, Х.Б. and Мустафаев, А.Г. and Мустафаев, Г.А.},
  title   = {Formation of thermally stable ohmic contacts based on MoGeInW},
  journal = {O‘zbekiston fizika jurnali},
  year    = {2025},
  volume  = {27},
  number  = {3}
}
RIS 
TY  - JOUR
AU  - Черкесова, Н.В.
AU  - Ашуров, Х.Б.
AU  - Мустафаев, А.Г.
AU  - Мустафаев, Г.А.
TI  - Formation of thermally stable ohmic contacts based on MoGeInW
JO  - O‘zbekiston fizika jurnali
PY  - 2025
VL  - 27
IS  - 3
ER  -