Ilim ha’m ja’miyet Issue 3-1 (2021) · pp. 10-12
КРЕМНИЙ КРИСТАЛЛ ПАНЖАРАСИДА НИКЕЛЬ КИРИШМА АТОМЛАРИНИНГ ГЕТТЕРЛОВЧИ ХОССАЛАРИ
Исмайлов, К.А., Камалов, Х.У., Исмайлов, Б.К.
Abstract
This article considers that by forming clusters of impurity nickel atoms in the crystal lattice of silicon, it is possible to realize gettering of various uncontrolling impurities, as well as oxygen atoms stimulating the generation of recombination centers and thermal defects.
геттерланишкремнийникельдиффузиярекомбинация марказлариgetteringsiliconnickeldiffusionrecombination centers
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