Ilim ha’m ja’miyet 2-1-нөмір (2025) · 5-8-беттер

Zn VA S KIRISHMA ATOMLARINI KREMNIYGA LEGIRLASHNING DIFFUZIYA USULINING MATEMATIK MODELI

Haqqulov, M.K., Isakov, B.O., Shakarov, F.Q., Mahmudov, S.Y., Sodiqova, F.O.

Дереккөзден оқу

Аңдатпа

This work is devoted to the mathematical modeling of the diffusion method of impurity Zn and S doped into silicon. In the work, a model of three different diffusion mechanisms was developed, and the results of the calculations showed that the diffusion of Zn first, then S dopants, is preferable in the formation of ZnS binary nanoclusters in silicon.

kremniyoltingugurtruxdiffuziyamodelкремнийсерацинкдиффузиямодель

Метадеректер дереккөзі: журналдың OAI-PMH архиві · Sindex толық мәтінді сақтамайды, дереккөзге сілтеме береді.

Дәйексөз алу

APA 7 
Haqqulov, M.K., Isakov, B.O., Shakarov, F.Q., Mahmudov, S.Y. & Sodiqova, F.O. (2025). Zn VA S KIRISHMA ATOMLARINI KREMNIYGA LEGIRLASHNING DIFFUZIYA USULINING MATEMATIK MODELI. Ilim ha’m ja’miyet, (2-1), 5-8.
GOST R 7.0.5 
Haqqulov, M.K., Isakov, B.O., Shakarov, F.Q., Mahmudov, S.Y., Sodiqova, F.O. Zn VA S KIRISHMA ATOMLARINI KREMNIYGA LEGIRLASHNING DIFFUZIYA USULINING MATEMATIK MODELI // Ilim ha’m ja’miyet. 2025. № 2-1. С. 5-8.
BibTeX 
@article{m.k.2025,
  author  = {Haqqulov, M.K. and Isakov, B.O. and Shakarov, F.Q. and Mahmudov, S.Y. and Sodiqova, F.O.},
  title   = {Zn VA S KIRISHMA ATOMLARINI KREMNIYGA LEGIRLASHNING DIFFUZIYA USULINING MATEMATIK MODELI},
  journal = {Ilim ha’m ja’miyet},
  year    = {2025},
  number  = {2-1},
  pages   = {5-8}
}
RIS 
TY  - JOUR
AU  - Haqqulov, M.K.
AU  - Isakov, B.O.
AU  - Shakarov, F.Q.
AU  - Mahmudov, S.Y.
AU  - Sodiqova, F.O.
TI  - Zn VA S KIRISHMA ATOMLARINI KREMNIYGA LEGIRLASHNING DIFFUZIYA USULINING MATEMATIK MODELI
JO  - Ilim ha’m ja’miyet
PY  - 2025
IS  - 2-1
SP  - 5
EP  - 8
ER  -