Ilim ha’m ja’miyet Issue 2-1 (2025) · pp. 5-8

Zn VA S KIRISHMA ATOMLARINI KREMNIYGA LEGIRLASHNING DIFFUZIYA USULINING MATEMATIK MODELI

Haqqulov, M.K., Isakov, B.O., Shakarov, F.Q., Mahmudov, S.Y., Sodiqova, F.O.

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Abstract

This work is devoted to the mathematical modeling of the diffusion method of impurity Zn and S doped into silicon. In the work, a model of three different diffusion mechanisms was developed, and the results of the calculations showed that the diffusion of Zn first, then S dopants, is preferable in the formation of ZnS binary nanoclusters in silicon.

kremniyoltingugurtruxdiffuziyamodelкремнийсерацинкдиффузиямодель

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APA 7 
Haqqulov, M.K., Isakov, B.O., Shakarov, F.Q., Mahmudov, S.Y. & Sodiqova, F.O. (2025). Zn VA S KIRISHMA ATOMLARINI KREMNIYGA LEGIRLASHNING DIFFUZIYA USULINING MATEMATIK MODELI. Ilim ha’m ja’miyet, (2-1), 5-8.
GOST R 7.0.5 
Haqqulov, M.K., Isakov, B.O., Shakarov, F.Q., Mahmudov, S.Y., Sodiqova, F.O. Zn VA S KIRISHMA ATOMLARINI KREMNIYGA LEGIRLASHNING DIFFUZIYA USULINING MATEMATIK MODELI // Ilim ha’m ja’miyet. 2025. № 2-1. С. 5-8.
BibTeX 
@article{m.k.2025,
  author  = {Haqqulov, M.K. and Isakov, B.O. and Shakarov, F.Q. and Mahmudov, S.Y. and Sodiqova, F.O.},
  title   = {Zn VA S KIRISHMA ATOMLARINI KREMNIYGA LEGIRLASHNING DIFFUZIYA USULINING MATEMATIK MODELI},
  journal = {Ilim ha’m ja’miyet},
  year    = {2025},
  number  = {2-1},
  pages   = {5-8}
}
RIS 
TY  - JOUR
AU  - Haqqulov, M.K.
AU  - Isakov, B.O.
AU  - Shakarov, F.Q.
AU  - Mahmudov, S.Y.
AU  - Sodiqova, F.O.
TI  - Zn VA S KIRISHMA ATOMLARINI KREMNIYGA LEGIRLASHNING DIFFUZIYA USULINING MATEMATIK MODELI
JO  - Ilim ha’m ja’miyet
PY  - 2025
IS  - 2-1
SP  - 5
EP  - 8
ER  -