Ilim ha’m ja’miyet № 2-1 (2025) · Саҳифаҳои 5-8
Zn VA S KIRISHMA ATOMLARINI KREMNIYGA LEGIRLASHNING DIFFUZIYA USULINING MATEMATIK MODELI
Haqqulov, M.K., Isakov, B.O., Shakarov, F.Q., Mahmudov, S.Y., Sodiqova, F.O.
Аннотатсия
This work is devoted to the mathematical modeling of the diffusion method of impurity Zn and S doped into silicon. In the work, a model of three different diffusion mechanisms was developed, and the results of the calculations showed that the diffusion of Zn first, then S dopants, is preferable in the formation of ZnS binary nanoclusters in silicon.
kremniyoltingugurtruxdiffuziyamodelкремнийсерацинкдиффузиямодель
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