Ilim ha’m ja’miyet 4-1-son (2025) · 29-31-betlar
MARGANEC KIRISPE ATOMLARÍNÍŃ KLASTERLERINE IYE KREMNIYDIŃ TIYKARǴÍ PARAMETRLERINE BASÍMNÍŃ TÁSIRIN ÚYRENIW
Tursınbaev, S.A.
Annotatsiya
This article experimentally investigates the effect of external pressure on the electrophysical properties of manganese-doped silicon. The diffusion of manganese atoms was carried out in p-type monocrystalline silicon samples. The results indicate that the presence of manganese clusters enhances the material's high strain sensitivity. This material is considered promising for the development of high-sensitivity strain sensors.
marganetskremniylegirlashdiffuziyabosimsezgirlikмарганецкремнийлегированиедиффузия
Metadata manbasi: jurnal OAI-PMH arxivi · Sindex toʻliq matnni saqlamaydi, manbaga havola beradi.