Ilim ha’m ja’miyet Issue 4-1 (2025) · pp. 29-31

Marganec Kirispe Atomlaríníń Klasterlerine Iye Kremniydiń Tiykarǵí Parametrlerine Basímníń Tásirin Úyreniw

Tursınbaev, S.A.

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Abstract

This article experimentally investigates the effect of external pressure on the electrophysical properties of manganese-doped silicon. The diffusion of manganese atoms was carried out in p-type monocrystalline silicon samples. The results indicate that the presence of manganese clusters enhances the material's high strain sensitivity. This material is considered promising for the development of high-sensitivity strain sensors.

marganetskremniylegirlashdiffuziyabosimsezgirlikмарганецкремнийлегированиедиффузия

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Cite

APA 7 
Tursınbaev, S.A. (2025). Marganec Kirispe Atomlaríníń Klasterlerine Iye Kremniydiń Tiykarǵí Parametrlerine Basímníń Tásirin Úyreniw. Ilim ha’m ja’miyet, (4-1), 29-31.
GOST R 7.0.5 
Tursınbaev, S.A. Marganec Kirispe Atomlaríníń Klasterlerine Iye Kremniydiń Tiykarǵí Parametrlerine Basímníń Tásirin Úyreniw // Ilim ha’m ja’miyet. 2025. № 4-1. С. 29-31.
BibTeX 
@article{s.a.2025,
  author  = {Tursınbaev, S.A.},
  title   = {Marganec Kirispe Atomlaríníń Klasterlerine Iye Kremniydiń Tiykarǵí Parametrlerine Basímníń Tásirin Úyreniw},
  journal = {Ilim ha’m ja’miyet},
  year    = {2025},
  number  = {4-1},
  pages   = {29-31}
}
RIS 
TY  - JOUR
AU  - Tursınbaev, S.A.
TI  - Marganec Kirispe Atomlaríníń Klasterlerine Iye Kremniydiń Tiykarǵí Parametrlerine Basímníń Tásirin Úyreniw
JO  - Ilim ha’m ja’miyet
PY  - 2025
IS  - 4-1
SP  - 29
EP  - 31
ER  -