Ilim ha’m ja’miyet № 4-1 (2025) · Саҳифаҳои 29-31
MARGANEC KIRISPE ATOMLARÍNÍŃ KLASTERLERINE IYE KREMNIYDIŃ TIYKARǴÍ PARAMETRLERINE BASÍMNÍŃ TÁSIRIN ÚYRENIW
Tursınbaev, S.A.
Аннотатсия
This article experimentally investigates the effect of external pressure on the electrophysical properties of manganese-doped silicon. The diffusion of manganese atoms was carried out in p-type monocrystalline silicon samples. The results indicate that the presence of manganese clusters enhances the material's high strain sensitivity. This material is considered promising for the development of high-sensitivity strain sensors.
marganetskremniylegirlashdiffuziyabosimsezgirlikмарганецкремнийлегированиедиффузия
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