Ilim ha’m ja’miyet Issue 1-1 (2026) · pp. 11-13

MODELING AND ANALYSIS OF HEAT PROCESSES IN SILICON GETEROSTRUCTURES DURING QUICK THERMAL PROCESSING

Asanov, D.J., Асанов, Д.Ж., Асанов, Д.Ж.

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Abstract

The paper presents modeling and experimental study of thermal processes in silicon-based Ni (5 at. % Pt)/Si heterostructures under rapid photon annealing. Three heat transfer regimes are analyzed: adiabatic, heat-flow, and thermal-balance. Temperature profiles show that at an energy density of 255 J/cm2 and a pulse duration of 1.8 s, the system reaches a thermal balance mode enabling uniform heating and the formation of the Ni2Si phase. Pt-doping improves thermal stability and reduces substrate deformation.

кремний гетероструктураларитезкор иссиқлик билан ишлов беришимпульсли фотон ишловииссислиқ балансиникел цилиндирларимоделлаштиришкремниевые гетероструктурыбыстрая термическая обработкаимпульсная фотонная обработкатепловой баланс

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APA 7 
Asanov, D.J., Асанов, Д.Ж. & Асанов, Д.Ж. (2026). MODELING AND ANALYSIS OF HEAT PROCESSES IN SILICON GETEROSTRUCTURES DURING QUICK THERMAL PROCESSING. Ilim ha’m ja’miyet, (1-1), 11-13.
GOST R 7.0.5 
Asanov, D.J., Асанов, Д.Ж., Асанов, Д.Ж. MODELING AND ANALYSIS OF HEAT PROCESSES IN SILICON GETEROSTRUCTURES DURING QUICK THERMAL PROCESSING // Ilim ha’m ja’miyet. 2026. № 1-1. С. 11-13.
BibTeX 
@article{d.j.2026,
  author  = {Asanov, D.J. and Асанов, Д.Ж. and Асанов, Д.Ж.},
  title   = {MODELING AND ANALYSIS OF HEAT PROCESSES IN SILICON GETEROSTRUCTURES DURING QUICK THERMAL PROCESSING},
  journal = {Ilim ha’m ja’miyet},
  year    = {2026},
  number  = {1-1},
  pages   = {11-13}
}
RIS 
TY  - JOUR
AU  - Asanov, D.J.
AU  - Асанов, Д.Ж.
AU  - Асанов, Д.Ж.
TI  - MODELING AND ANALYSIS OF HEAT PROCESSES IN SILICON GETEROSTRUCTURES DURING QUICK THERMAL PROCESSING
JO  - Ilim ha’m ja’miyet
PY  - 2026
IS  - 1-1
SP  - 11
EP  - 13
ER  -