Ilim ha’m ja’miyet 1-1-san (2026) · 11-13-betler
MODELING AND ANALYSIS OF HEAT PROCESSES IN SILICON GETEROSTRUCTURES DURING QUICK THERMAL PROCESSING
Asanov, D.J., Асанов, Д.Ж., Асанов, Д.Ж.
Annotaciya
The paper presents modeling and experimental study of thermal processes in silicon-based Ni (5 at. % Pt)/Si heterostructures under rapid photon annealing. Three heat transfer regimes are analyzed: adiabatic, heat-flow, and thermal-balance. Temperature profiles show that at an energy density of 255 J/cm2 and a pulse duration of 1.8 s, the system reaches a thermal balance mode enabling uniform heating and the formation of the Ni2Si phase. Pt-doping improves thermal stability and reduces substrate deformation.
кремний гетероструктураларитезкор иссиқлик билан ишлов беришимпульсли фотон ишловииссислиқ балансиникел цилиндирларимоделлаштиришкремниевые гетероструктурыбыстрая термическая обработкаимпульсная фотонная обработкатепловой баланс
Metadata derekkózi: jurnal OAI-PMH arxivi · Sindex tolıq mátindi saqlamaydı, derekkózge silteme beredi.