Ilim ha’m ja’miyet Issue 5-1 (2024) · pp. 26-27
KISLORODLI MONOKRISTALLI KREMNIYNI RENTGENOSTRUKTURAVIY OʻRGANISH
Maxmudov, Sh.A., Jurayeva, M.F., Jalelov, M.A., Odilova, N.J.
Abstract
In the article, single-crystal silicon having a perfect structure with a lattice parameter of 0,54292 nm and subcrystallites with a size of 94 nm was studied and determined the formation of low-dimensional defects consisting with the participation of oxygen in silicon grown by the Czochralski method.
monokristallkremniymikronuqsonlarkislorod konsentratsiyasirentgenografiyabir xilmaslikмонокристаллкремниимикродефектыконцентрация кислорода
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