Ilim ha’m ja’miyet 5-1-son (2024) · 26-27-betlar
KISLORODLI MONOKRISTALLI KREMNIYNI RENTGENOSTRUKTURAVIY OʻRGANISH
Maxmudov, Sh.A., Jurayeva, M.F., Jalelov, M.A., Odilova, N.J.
Annotatsiya
In the article, single-crystal silicon having a perfect structure with a lattice parameter of 0,54292 nm and subcrystallites with a size of 94 nm was studied and determined the formation of low-dimensional defects consisting with the participation of oxygen in silicon grown by the Czochralski method.
monokristallkremniymikronuqsonlarkislorod konsentratsiyasirentgenografiyabir xilmaslikмонокристаллкремниимикродефектыконцентрация кислорода
Metadata manbasi: jurnal OAI-PMH arxivi · Sindex toʻliq matnni saqlamaydi, manbaga havola beradi.