Ilim ha’m ja’miyet 5-1-san (2024) · 26-27-betler
KISLORODLI MONOKRISTALLI KREMNIYNI RENTGENOSTRUKTURAVIY OʻRGANISH
Maxmudov, Sh.A., Jurayeva, M.F., Jalelov, M.A., Odilova, N.J.
Annotaciya
In the article, single-crystal silicon having a perfect structure with a lattice parameter of 0,54292 nm and subcrystallites with a size of 94 nm was studied and determined the formation of low-dimensional defects consisting with the participation of oxygen in silicon grown by the Czochralski method.
monokristallkremniymikronuqsonlarkislorod konsentratsiyasirentgenografiyabir xilmaslikмонокристаллкремниимикродефектыконцентрация кислорода
Metadata derekkózi: jurnal OAI-PMH arxivi · Sindex tolıq mátindi saqlamaydı, derekkózge silteme beredi.